NTJD4152PT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTJD4152PT1G
Datasheet:
Description:
MOSFETs SOT-363 SMD/SMT P-Channel number of channels:2 272 mW -20 V Continuous Drain Current (ID):880 mA 2.2 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2.1844 mm |
| Width | 1.3462 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 215 MΩ |
| Height | 990.6 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Current Rating | -880 mA |
| Max Power Dissipation | 272 mW |
| Power Dissipation | 272 mW |
| Threshold Voltage | -1.2 V |
| Number of Channels | 2 |
| Input capacitance | 155 pF |
| Continuous Drain Current (ID) | 880 mA |
| Rds On Max | 260 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 5.8 ns |
| Turn-Off Delay Time | 13.5 ns |
| Element Configuration | Dual |
| Fall Time | 6.5 ns |
| Rise Time | 6.5 ns |
| Gate Charge | 2.2 nC |
| Drain to Source Resistance | 600 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 655
Distributors
pcbx
pcbxUnit Price$0.13018
Ext.Price$0.13018
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.13018 | $0.13018 |
| 10 | $0.11735 | $1.17350 |
| 50 | $0.10579 | $5.28950 |
| 100 | $0.09503 | $9.50300 |
| 500 | $0.08536 | $42.68000 |
| 1000 | $0.07718 | $77.18000 |
| 3000 | $0.06978 | $209.34000 |
| 5000 | $0.06605 | $330.25000 |